Browsing by Author "Abusleme, A."

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    Mismatch of lateral field metal-oxide-metal capacitors in 180 nm CMOS process
    (INST ENGINEERING TECHNOLOGY-IET, 2012) Abusleme, A.; Dragone, A.; Haller, G.; Murmann, B.
    Metal-oxide-metal (MOM) capacitors represent an attractive alternative to metal-insulator-metal (MIM) capacitors in mixed-signal integrated circuits. Since they are made of metal lines, they can be integrated in standard CMOS processes, and tailored over a wide range of sizes. Mismatch data of MOM capacitors, however, is scarce and typically conservative. Presented is the design and the test results of a custom ADC that employs an array of 1024 MOM capacitors sized at 2 fF. Static performance metrics are presented and compared with those for an ADC based on MIM capacitors. Mismatch data is computed from the results.
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    Noise power normalisation: extension of g(m)/I-D technique for noise analysis
    (INST ENGINEERING TECHNOLOGY-IET, 2012) Alvarez, E.; Abusleme, A.
    MOSFET models for deep submicron technologies involve accurate and complex equations not suitable for hand analysis. Although the g(m)/I-D design-oriented approach has overcome this limitation by combining hand calculations with data obtained from SPICE simulations, it has not been systematically used for noise calculations, since the dependence of noise on this parameter is not direct. An attempt to express noise as a function of g(m)/I-D is presented. By introducing the normalised noise concept, noise curves that depend solely on the device length and operation point can be obtained directly from SPICE simulations, and then used in the design flow. The main outcome is a simple design-oriented methodology for noise calculations that does not depend on equations for a specific technology or operating region, and that is easy to migrate among different technologies.