CdS amorphous thin films photochemical synthesis and optical characterization

dc.contributor.authorTejos, Marisol
dc.contributor.authorRolon, Barbara G.
dc.contributor.authordel Rio, Rodrigo
dc.contributor.authorCabello, Gerardo
dc.date.accessioned2025-01-21T01:05:05Z
dc.date.available2025-01-21T01:05:05Z
dc.date.issued2008
dc.description.abstractThin amorphous nanostructured CdS films were photochemically obtained via direct UV radiation (lambda = 254 nm) of complex Cd[(CH3)(2)CHCH2CH2OCS2](2) on Si(100) and ITO-covered glass substrate by spin coating. Thin cadmium xanthate complex films' UV photolysis results in loss of all ligands from the coordination sphere. X-ray photoelectron spectra for as-deposited US thin films show the most representative signals of Cd 3d(5/2) located at 405eV, Cd 3d(3/2) located at 412eV and a small signal S 2p located at 162 eV. The surface morphology of the films was examined via atomic force microscopy. This can be described as a fibrous-type surface without structural order, which is characteristic of an amorphous deposit. The optical band gap value was 2.85 and 3.15 +/- 0.1 eV. (C) 2009 Elsevier Ltd. All rights reserved.
dc.description.funderUniversidad de Valparaiso
dc.fuente.origenWOS
dc.identifier.doi10.1016/j.mssp.2009.04.004
dc.identifier.eissn1873-4081
dc.identifier.issn1369-8001
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2009.04.004
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/95810
dc.identifier.wosidWOS:000268123200004
dc.issue.numero3
dc.language.isoen
dc.pagina.final99
dc.pagina.inicio94
dc.revistaMaterials science in semiconductor processing
dc.rightsacceso restringido
dc.subjectAmorphous materials
dc.subjectPhotochemical synthesis
dc.subjectThin film
dc.subjectOptical materials
dc.subject.ods07 Affordable and Clean Energy
dc.subject.odspa07 Energía asequible y no contaminante
dc.titleCdS amorphous thin films photochemical synthesis and optical characterization
dc.typeartículo
dc.volumen11
sipa.indexWOS
sipa.trazabilidadWOS;2025-01-12
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